TY  - RPRT
TI  - The effect of Ta oxygen scavenger layer on HfO$_2$-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport
AU  - X. Zhong
AU  - I. Rungger
AU  - P. Zapol
AU  - H. Nakamura
AU  - Y. Asai
AU  - O. Heinonen
PY  - 2016
DO  - 10.1039/c6cp00450d
UR  - https://arxiv.org/abs/1602.06793
ID  - 1602.06793
ER  -