@misc{indiciaef35a2c223820,
  title = {Nonpolar p-GaN/n-Si heterojunction diode characteristics: A comparison between ensemble and single nanowire devices},
  author = {Avinash Patsha and Ramanathaswamy Pandian and Sandip Dhara and A. K. Tyagi},
  year = {2016},
  doi = {10.1088/0022-3727/48/39/395102},
  url = {https://arxiv.org/abs/1605.03291},
  note = {Source identifier: 1605.03291}
}