@misc{indiciaebefa0acbf8cd,
  title = {Resistive Switching Phenomena of HfO2 Films Grown by MOCVD for Resistive Switching Memory Devices},
  author = {Min Ju Yun and Sungho Kim and Hee-Dong Kim},
  year = {2016},
  url = {https://arxiv.org/abs/1605.06014},
  note = {Source identifier: 1605.06014}
}