@misc{indiciae504aaef0d1f7,
  title = {Electronic topological transitions in Nb\$\_3\$X (X = Al, Ga, In, Ge and Sn) under compression investigated by first principles calculations},
  author = {P. V. Sreenivasa Reddy and V. Kanchana and G. Vaitheeswaran and P. Modak and Ashok K. Verma},
  year = {2016},
  doi = {10.1063/1.4941553},
  url = {https://arxiv.org/abs/1606.00460},
  note = {Source identifier: 1606.00460}
}