@misc{indiciaecda48990a482,
  title = {Parametrization of the radiation induced leakage current increase of NMOS transistors},
  author = {Malte Backhaus},
  year = {2016},
  doi = {10.1088/1748-0221/12/01/p01011},
  url = {https://arxiv.org/abs/1610.01887},
  note = {Source identifier: 1610.01887}
}