TY  - RPRT
TI  - Parametrization of the radiation induced leakage current increase of NMOS transistors
AU  - Malte Backhaus
PY  - 2016
DO  - 10.1088/1748-0221/12/01/p01011
UR  - https://arxiv.org/abs/1610.01887
ID  - 1610.01887
ER  -