TY  - RPRT
TI  - Mechanisms of initial oxidation of 4H-SiC (0001) and (000$\bar{1}$) surfaces unraveled by first-principles calculations
AU  - Yu-ichiro Matsushita
AU  - Atsushi Oshiyama
PY  - 2016
UR  - https://arxiv.org/abs/1612.00189
ID  - 1612.00189
ER  -