@misc{indiciaedcb56e5b5eb2,
  title = {High Performance Depletion/Enhancement-Mode beta-Ga2O3 on Insulator (GOOI) Field-effect Transistors with Record Drain Currents of 600/450 mA/mm},
  author = {Hong Zhou and Mengwei Si and Sami Alghmadi and Gang Qiu and Lingming Yang and Peide D. Ye},
  year = {2018},
  doi = {10.1109/led.2016.2635579},
  url = {https://arxiv.org/abs/1612.06368},
  note = {Source identifier: 1612.06368}
}