@misc{indiciaeffe316b6ea07,
  title = {Annealing shallow Si/SiO\$\_2\$ interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors},
  author = {Jin-Sung Kim and Alexei M. Tyryshkin and Stephen A. Lyon},
  year = {2017},
  doi = {10.1063/1.4979035},
  url = {https://arxiv.org/abs/1612.08729},
  note = {Source identifier: 1612.08729}
}