@misc{indiciae7ac13e7afe27,
  title = {Characterization of Traps at Nitrided SiO\$\_2\$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements},
  author = {Tetsuo Hatakeyama and Yuji Kiuchi and Mitsuru Sometani and Shinsuke Harada and Dai Okamoto and Hiroshi Yano and Yoshiyuki Yonezawa and Hajime Okumura},
  year = {2017},
  doi = {10.7567/apex.10.046601},
  url = {https://arxiv.org/abs/1703.00615},
  note = {Source identifier: 1703.00615}
}