TY  - RPRT
TI  - Characterization of Traps at Nitrided SiO$_2$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements
AU  - Tetsuo Hatakeyama
AU  - Yuji Kiuchi
AU  - Mitsuru Sometani
AU  - Shinsuke Harada
AU  - Dai Okamoto
AU  - Hiroshi Yano
AU  - Yoshiyuki Yonezawa
AU  - Hajime Okumura
PY  - 2017
DO  - 10.7567/apex.10.046601
UR  - https://arxiv.org/abs/1703.00615
ID  - 1703.00615
ER  -