@misc{indiciae57d4a0f2b669,
  title = {Ga-polar (In,Ga)N/GaN quantum wells vs. N-polar (In,Ga)N quantum disks in GaN nanowires: Comparative analysis of carrier recombination, diffusion, and radiative efficiency},
  author = {F. Feix and T. Flissikowski and K. K. Sabelfeld and V. M. Kaganer and M. Wölz and L. Geelhaar and H. T. Grahn and O. Brandt},
  year = {2017},
  doi = {10.1103/physrevapplied.8.014032},
  url = {https://arxiv.org/abs/1703.06715},
  note = {Source identifier: 1703.06715}
}