@misc{indiciaefa5868390b7e,
  title = {On the impact ionization rate in direct gap semiconductors},
  author = {A. N. Afanasiev and A. A. Greshnov and G . G. Zegrya},
  year = {2017},
  doi = {10.1134/s0021364017090065},
  url = {https://arxiv.org/abs/1704.02200},
  note = {Source identifier: 1704.02200}
}