@misc{indiciaec37542bb203f,
  title = {Spin injection into Si in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer},
  author = {Shoichi Sato and Ryosho Nakane and Takato Hada and Masaaki Tanaka},
  year = {2017},
  doi = {10.1103/physrevb.96.235204},
  url = {https://arxiv.org/abs/1704.06582},
  note = {Source identifier: 1704.06582}
}