TY  - RPRT
TI  - Tailoring the SiC surface - a morphology study on the epitaxial growth of graphene and its buffer layer
AU  - Mattias Kruskopf
AU  - Klaus Pierz
AU  - Davood Momeni Pakdehi
AU  - Stefan Wundrack
AU  - Rainer Stosch
AU  - Andrey Bakin
AU  - Hans W. Schumacher
PY  - 2017
DO  - 10.1016/j.tsf.2018.05.025
UR  - https://arxiv.org/abs/1704.08078
ID  - 1704.08078
ER  -