@misc{indiciaec3b5f9a10845,
  title = {An efficient tight-binding mode-space NEGF model enabling up to million atoms III-V nanowire MOSFETs and TFETs simulations},
  author = {Aryan Afzalian and Tim Vasen and Peter Ramvall and Matthias Passlack},
  year = {2017},
  doi = {10.1088/1361-648x/aac156},
  url = {https://arxiv.org/abs/1705.00909},
  note = {Source identifier: 1705.00909}
}