@misc{indiciae902dc1563085,
  title = {MOCVD growth of N-polar GaN on on-axis sapphire substrate: impact of AlN nucleation layer on GaN surface hillock density},
  author = {Jonathan Marini and Jeffrey Leathersich and Isra Mahaboob and John Bulmer and Neil Newman and F. and Shahedipour-Sandvik},
  year = {2017},
  doi = {10.1016/j.jcrysgro.2016.02.029},
  url = {https://arxiv.org/abs/1705.04237},
  note = {Source identifier: 1705.04237}
}