TY  - RPRT
TI  - MOCVD growth of N-polar GaN on on-axis sapphire substrate: impact of AlN nucleation layer on GaN surface hillock density
AU  - Jonathan Marini
AU  - Jeffrey Leathersich
AU  - Isra Mahaboob
AU  - John Bulmer
AU  - Neil Newman
AU  - F.
AU  - Shahedipour-Sandvik
PY  - 2017
DO  - 10.1016/j.jcrysgro.2016.02.029
UR  - https://arxiv.org/abs/1705.04237
ID  - 1705.04237
ER  -