@misc{indiciaed08d6e54cec3,
  title = {Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices},
  author = {E. Bussmann and John King Gamble and J. C. Koepke and D. Laroche and S. H. Huang and Y. Chuang and J. -Y. Li and C. W. Liu and B. S. Swartzentruber and M. P. Lilly and M. S. Carroll and T. -M. Lu},
  year = {2017},
  doi = {10.1103/physrevmaterials.2.066004},
  url = {https://arxiv.org/abs/1710.06449},
  note = {Source identifier: 1710.06449}
}