@misc{indiciaebb33de2187e0,
  title = {Realization of a hole-doped Mott insulator on a triangular silicon lattice},
  author = {Fangfei Ming and Steve Johnston and Daniel Mulugeta and Tyler S. Smith and Paolo Vilmercati and Geunseop Lee and Thomas A. Maier and Paul C. Snijders and Hanno H. Weitering},
  year = {2017},
  doi = {10.1103/physrevlett.119.266802},
  url = {https://arxiv.org/abs/1710.08065},
  note = {Source identifier: 1710.08065}
}