@misc{indiciae5551f7af95f1,
  title = {High-Speed Gate Driver Using GaN HEMTs for 20-MHz Hard Switching of SiC MOSFETs},
  author = {Takafumi Okuda and Takashi Hikihara},
  year = {2017},
  url = {https://arxiv.org/abs/1711.02832},
  note = {Source identifier: 1711.02832}
}