@misc{indiciaeb7baf2f9ed68,
  title = {Effect of crystalline anisotropy on vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes on EFG single-crystal substrates},
  author = {Houqiang Fu and Hong Chen and Xuanqi Huang and Izak Baranowski and Jossue Montes and Tsung-Han Yang and Yuji Zhao},
  year = {2017},
  doi = {10.1109/ted.2018.2841904},
  url = {https://arxiv.org/abs/1712.01318},
  note = {Source identifier: 1712.01318}
}