TY  - RPRT
TI  - Effect of crystalline anisotropy on vertical (-201) and (010) beta-Ga2O3 Schottky barrier diodes on EFG single-crystal substrates
AU  - Houqiang Fu
AU  - Hong Chen
AU  - Xuanqi Huang
AU  - Izak Baranowski
AU  - Jossue Montes
AU  - Tsung-Han Yang
AU  - Yuji Zhao
PY  - 2017
DO  - 10.1109/ted.2018.2841904
UR  - https://arxiv.org/abs/1712.01318
ID  - 1712.01318
ER  -