@misc{indiciae87bd794b88f1,
  title = {Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor},
  author = {Toshiki Kanaki and Hiroki Yamasaki and Tomohiro Koyama and Daichi Chiba and Shinobu Ohya and Masaaki Tanaka},
  year = {2018},
  url = {https://arxiv.org/abs/1801.01670},
  note = {Source identifier: 1801.01670}
}