TY  - RPRT
TI  - Highly selective dry etching of GaP in the presence of Al$_\textrm{x}$Ga$_{1-\textrm{x}}$P
AU  - Simon Hönl
AU  - Herwig Hahn
AU  - Yannick Baumgartner
AU  - Lukas Czornomaz
AU  - Paul Seidler
PY  - 2018
DO  - 10.1088/1361-6463/aab8b7
UR  - https://arxiv.org/abs/1801.06469
ID  - 1801.06469
ER  -