@misc{indiciae1c34371fe4cd,
  title = {Precursors of gate oxide degradation in SiC power MOSFETs},
  author = {Ujjwal Karki and Fang Zheng Peng},
  year = {2018},
  url = {https://arxiv.org/abs/1802.08085},
  note = {Source identifier: 1802.08085}
}