@misc{indiciaee57829ded2c3,
  title = {Simulation study of ballistic spin-MOSFET devices with ferromagnetic channels based on some Heusler and oxide compounds},
  author = {Patrizio Graziosi and Neophytos Neophytou},
  year = {2018},
  doi = {10.1063/1.5011328},
  url = {https://arxiv.org/abs/1803.01789},
  note = {Source identifier: 1803.01789}
}