@misc{indiciae1658075257b9,
  title = {Electrometry by optical charge conversion of deep defects in 4H-SiC},
  author = {G. Wolfowicz and S. J. Whiteley and D. D. Awschalom},
  year = {2018},
  doi = {10.1073/pnas.1806998115},
  url = {https://arxiv.org/abs/1803.05956},
  note = {Source identifier: 1803.05956}
}