TY  - RPRT
TI  - Electrometry by optical charge conversion of deep defects in 4H-SiC
AU  - G. Wolfowicz
AU  - S. J. Whiteley
AU  - D. D. Awschalom
PY  - 2018
DO  - 10.1073/pnas.1806998115
UR  - https://arxiv.org/abs/1803.05956
ID  - 1803.05956
ER  -