@misc{indiciae9f550b51056d,
  title = {Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the (\$0001\$) Si-face and (\$000\textbackslash{}overline\{1\}\$) C-face by using a new Si-O-C interatomic potential},
  author = {So Takamoto and Takahiro Yamasaki and Takahisa Ohno and Chioko Kaneta and Asuka Hatano and Satoshi Izumi},
  year = {2018},
  doi = {10.1063/1.5028273},
  url = {https://arxiv.org/abs/1804.08860},
  note = {Source identifier: 1804.08860}
}