TY  - RPRT
TI  - Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ($0001$) Si-face and ($000\overline{1}$) C-face by using a new Si-O-C interatomic potential
AU  - So Takamoto
AU  - Takahiro Yamasaki
AU  - Takahisa Ohno
AU  - Chioko Kaneta
AU  - Asuka Hatano
AU  - Satoshi Izumi
PY  - 2018
DO  - 10.1063/1.5028273
UR  - https://arxiv.org/abs/1804.08860
ID  - 1804.08860
ER  -