@misc{indiciae4d4cd1860198,
  title = {High performance Tunnel Field Effect Transistors based on in-plane transition metal dichalcogenide heterojunctions},
  author = {Jean Choukroun and Marco Pala and Shiang Fang and Efthimios Kaxiras and Philippe Dollfus},
  year = {2018},
  doi = {10.1088/1361-6528/aae7df},
  url = {https://arxiv.org/abs/1807.07128},
  note = {Source identifier: 1807.07128}
}