@misc{indiciaeff806554f30d,
  title = {Engineering strain relaxation of GeSn epilayers on Ge/Si(001) substrates},
  author = {Krista R Khiangte and Jaswant S Rathore and Vaibhav Sharma and Apurba Laha and Suddhasatta Mahapatra},
  year = {2018},
  doi = {10.1016/j.ssc.2018.09.012},
  url = {https://arxiv.org/abs/1807.09718},
  note = {Source identifier: 1807.09718}
}