@misc{indiciae8ab0e3eba733,
  title = {Locating the avalanche structure and the origin of breakdown generating charge carriers in silicon photomultipliers by using the bias dependent breakdown probability},
  author = {Adam Nepomuk Otte and Thanh Nguyen and Joel Stansbury},
  year = {2018},
  doi = {10.1016/j.nima.2018.11.086},
  url = {https://arxiv.org/abs/1808.00487},
  note = {Source identifier: 1808.00487}
}