TY  - RPRT
TI  - Locating the avalanche structure and the origin of breakdown generating charge carriers in silicon photomultipliers by using the bias dependent breakdown probability
AU  - Adam Nepomuk Otte
AU  - Thanh Nguyen
AU  - Joel Stansbury
PY  - 2018
DO  - 10.1016/j.nima.2018.11.086
UR  - https://arxiv.org/abs/1808.00487
ID  - 1808.00487
ER  -