@misc{indiciae5a516910b629,
  title = {High-performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying-barrier-type Indium Electrodes},
  author = {Yu-Ting Huang and Yi-Hsun Chen and Yi-Ju Ho and Shih-Wei Huang and Yih-Ren Chang and Kenji Watanabe and Takashi Taniguchi and Hsiang-Chih Chiu and Chi-Te Liang and Raman Sankar and Fang-Cheng Chou and Chun-Wei Chen and Wei-Hua Wang},
  year = {2018},
  url = {https://arxiv.org/abs/1809.03181},
  note = {Source identifier: 1809.03181}
}