@misc{indiciae0d5b4d5c36e1,
  title = {Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas},
  author = {Samuel James Bader and Reet Chaudhuri and Kazuki Nomoto and Austin Hickman and Zhen Chen and Han Wui Then and David A. Muller and Huili Grace Xing and Debdeep Jena},
  year = {2018},
  doi = {10.1109/led.2018.2874190},
  url = {https://arxiv.org/abs/1809.04012},
  note = {Source identifier: 1809.04012}
}