@misc{indiciae6dc36609673a,
  title = {Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors},
  author = {J. G. Gluschke and J. Seidl and A. M. Burke and R. W. Lyttleton and D. J. Carrad and A. R. Ullah and S. Fahlvik Svensson and S. Lehmann and H. Linke and A. P. Micolich},
  year = {2018},
  doi = {10.1088/1361-6528/aaf1e5},
  url = {https://arxiv.org/abs/1810.03359},
  note = {Source identifier: 1810.03359}
}