@misc{indiciaeb30c4835bec3,
  title = {A 256kb 9T Near-Threshold SRAM With 1k Cells per Bit-Line and Enhanced Write and Read Operations},
  author = {Ghasem Pasandi and Sied Mehdi Fakhraei},
  year = {2019},
  url = {https://arxiv.org/abs/1812.10011},
  note = {Source identifier: 1812.10011}
}