@misc{indiciae6451acc5e626,
  title = {AlN/beta-Ga2O3 based HEMT: a potential pathway to ultimate high power device},
  author = {Yi Lu and Hsin-Hung Yao and Jingtao Li and Jianchang Yan and Junxi Wang and Jinmin Li and Xiaohang Li},
  year = {2019},
  url = {https://arxiv.org/abs/1901.05111},
  note = {Source identifier: 1901.05111}
}