@misc{indiciae2f7a004e49ad,
  title = {Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing},
  author = {Takuma Kobayashi and Keita Tachiki and Koji Ito and Tsunenobu Kimoto},
  year = {2019},
  doi = {10.7567/1882-0786/ab032b},
  url = {https://arxiv.org/abs/1901.05681},
  note = {Source identifier: 1901.05681}
}