TY  - RPRT
TI  - Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing
AU  - Takuma Kobayashi
AU  - Keita Tachiki
AU  - Koji Ito
AU  - Tsunenobu Kimoto
PY  - 2019
DO  - 10.7567/1882-0786/ab032b
UR  - https://arxiv.org/abs/1901.05681
ID  - 1901.05681
ER  -