@misc{indiciaef8bb0e48ff2d,
  title = {Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer},
  author = {Vladislav Voronenkov and Andrey Leonidov and Natalia Bochkareva and Ruslan Gorbunov and Philippe Latyshev and Yuri Lelikov and Viktor Kogotkov and Andrey Zubrilov and Yuri Shreter},
  year = {2019},
  doi = {10.1088/1742-6596/1199/1/012004},
  url = {https://arxiv.org/abs/1902.04672},
  note = {Source identifier: 1902.04672}
}