TY  - RPRT
TI  - $\mathrm{BaAs_3}$: A narrow gap 2D semiconductor with vacancy-induced semiconductor-metal transition
AU  - Ping Tang
AU  - Jun-Hui Yuan
AU  - Ya-Qian Song
AU  - Ming Xu
AU  - Kan-Hao Xue
AU  - Xiang-Shui Miao
PY  - 2019
DO  - 10.1007/s10853-019-03796-y
UR  - https://arxiv.org/abs/1904.08742
ID  - 1904.08742
ER  -