@misc{indiciae25521713285f,
  title = {On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field},
  author = {Isabel Harrysson Rodrigues and David Niepce and Arsalan Pourkabirian and Giuseppe Moschetti and Joel Schleeh and Thilo Bauch and Jan Grahn},
  year = {2019},
  doi = {10.1063/1.5107493},
  url = {https://arxiv.org/abs/1904.12757},
  note = {Source identifier: 1904.12757}
}