@misc{indiciae5f5610afdf36,
  title = {Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing},
  author = {Ke Wang and Hai-Ou Li and Gang Luo and Xin Zhang and Fang-Ming Jing and Rui-Zi Hu and Yuan Zhou and He Liu and Gui-Lei Wang and Gang Cao and Ming Xiao and Hong-Wen Jiang and Guo-Ping Guo},
  year = {2020},
  doi = {10.1209/0295-5075/130/27001},
  url = {https://arxiv.org/abs/1905.01581},
  note = {Source identifier: 1905.01581}
}