@misc{indiciae23079cf98139,
  title = {Compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors},
  author = {Towhidur Razzak and Seongmo Hwang and Antwon Coleman and Hao Xue and Shahadat Hasan Sohel and Sanyam Bajaj and Yuewei Zhang and Wu Lu and Asif Khan and Siddharth Rajan},
  year = {2019},
  doi = {10.1063/1.5108529},
  url = {https://arxiv.org/abs/1906.10270},
  note = {Source identifier: 1906.10270}
}