@misc{indiciaef55d889be334,
  title = {Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors},
  author = {S. D. Baranovskii and A. V. Nenashev and J. O. Oelerich and S. H. M. Greiner and A. V. Dvurechenskii and F. Gebhard},
  year = {2019},
  doi = {10.1209/0295-5075/127/57004},
  url = {https://arxiv.org/abs/1907.05113},
  note = {Source identifier: 1907.05113}
}