@misc{indiciae561b2625114f,
  title = {Intrinsic point defects and the \$n\$- and \$p\$-type dopability of the narrow gap semiconductors GaSb and InSb},
  author = {J. Buckeridge and T. D. Veal and C. R. A. Catlow and D. O. Scanlon},
  year = {2019},
  doi = {10.1103/physrevb.100.035207},
  url = {https://arxiv.org/abs/1907.13063},
  note = {Source identifier: 1907.13063}
}