TY  - RPRT
TI  - Intrinsic point defects and the $n$- and $p$-type dopability of the narrow gap semiconductors GaSb and InSb
AU  - J. Buckeridge
AU  - T. D. Veal
AU  - C. R. A. Catlow
AU  - D. O. Scanlon
PY  - 2019
DO  - 10.1103/physrevb.100.035207
UR  - https://arxiv.org/abs/1907.13063
ID  - 1907.13063
ER  -